PART |
Description |
Maker |
2SJ348 |
High Output MOSFETs
|
SANYO
|
2SJ654 |
High Output MOSFETs DC / DC Converter Applications
|
Sanyo Semicon Device
|
2SK3821 |
High Output MOSFETs General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
2SK3707 |
High Output MOSFETs General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
2SK3818 |
High Output MOSFETs N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
EC4402C |
Medium Output MOSFETs
|
SANYO
|
SCH1301 |
Medium Output MOSFETs
|
SANYO
|
2SK3335 |
Medium Output MOSFETs
|
SANYO
|
2SK3614 |
Medium Output MOSFETs
|
SANYO
|